CMPL SEMICON
National Institute of Physics
University of the Philippines - Diliman
The CMPL-Semiconductors Group practices different growth techniques using the RF Magnetron Sputtering System and Molecular Beam Epitaxy (MBE). These facilities are used for growth of thin films and several nanostructures that could be used in different devices.
Molecular Beam Epitaxy
The Riber M32 Molecular Beam Epitaxy System is one of the largest ultrahigh vacuum (UHV) systems in the Condensed Matter Physics Laboratory, utilizing five different pumps to create and maintain pressures of up to 10^-11 Torr. Molecular beam epitaxy (MBE) is a key technology in creating materials for use in electronic devices composed of compound semiconductors such as indium antimonide and zinc selenide. The M32 MBE system is specifically designed for growth of III-V compound semiconductors such as gallium arsenide and indium phosphide which allows the laboratory to perform active research with these materials and create devices such as solar cells and integrated circuits. At the commercial level, MBE-grown materials are used for the production of monolithic microwave integrated circuits (MMIC) and optoelectronic devices because of their ability to operate at high frequencies with less electronic noise and distortion than silicon based devices.
RF Magnetron Sputtering System
Sputtering is widely used in the semiconductor industry for the deposition of various materials significant for integrated circuit processing. Fabrication of thin film sensors and photovoltaic thin films (solar cells) are just some of the various applications of this method. It can deposit contact metals for semiconductor devices. The RF Magnetron Sputtering utilizes RF, that allows sputtering of insulators, and Magnetron Sputtering, that improves the ionization of sputtering gas, to significantly improve sputtering yield.
The CMPL RF Magnetron Sputtering System was designed and constructed by the members of the Semiconductor Research Group. The system operates under high vacuum with the use of pumps. It deposits various metals such as Ti, Al, Ni, Ag, Fe, and Al: In to produce thin films. It can perform reactive sputtering through the inclusion of nitrogen as a reacting gas.