CMPL SEMICON
National Institute of Physics
University of the Philippines - Diliman
2008
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2007
Influence of As4 flux on the growth kinetics, structure, and optical properties of InAs/GaAs quantum dots
A. Garcia, C. M. Mateo, M. Defensor, A. Salvador, H. K. Hui, C. B. Boothroyd, and E. Philpott. J. Appl. Phys. 102, 073526 (2007)
Strain-induced splitting of the valence band in epitaxially lifted-off GaAs films
Cherry May N. Mateo, Alipio T. Garcia, Flo Rykiel M. Ramos, Kristine I. Manibog, and Arnel A. Salvador
J. Appl. Phys. 101, 073519 (2007)
Surface structure dependent growth of InAs/InAlAs quantum wires on InP(100) substrate
M.F. Casco, J.V. Misa, M. Defensor, A. Garcia, A. Salvador. (Advanced Materials in press)
Strain-induced splitting of the valence band in epitaxially lifted-off GaAs films. Cherry May N. Mateo, Alipio T. Garcia
Flo Rykiel M. Ramos, Kristine I. Manibog, and Arnel A. Salvador
J. Appl. Phys. 101, 073519 (2007); DOI:10.1063/1.2716869. Published 12 April 2007
Observation of multiple phonon-assisted emission in InAs quantum dots embedded in InGaAs/ GaAs quantum well.
Valynn Katrine P. Mag-usara, Armando S. Somintac, and Arnel A. Salvador. (submitted for JAP)
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2006
Photoluminescence decay characteristics of an oxide-confined vertical cavity surface emitting laser
F.D. Recoleto Jr., J.N. Mateo, MG.S.Dimamay, A.S.Somintac, E.S.Estacio and A.A. Salvador, APL February 2006
Strain-induced Splitting of the Valence Band in Epitaxially Lifted-off GaAs Films
C.M.N. Mateo, A.T. Garcia, F.R.M. Ramos, K.I. Manibog and A.A. Salvador , (JAP in press)
Improvement of the Photoluminescence Decay Response Characteristics of an Oxideconfined Vertical Cavity Surface Emitting Laser Structure probed by Femtosecond laser pulses,
F. Recoleto Jr., J. Mateo, M. Dimamay, E. Estacio, and A. Salvador (Springer in press)
Control of the surface morphology of MBE-grown InxAl1-xAs and InxGa1-x As layers on InP via manipulation of In content,
J.V. Misa, M.F. Casco, A. Garcia, A. Salvador (submitted for ICMAT)
Surface structure dependent growth of InAs/InAlAs quantum wires on InP(100) substrate,
M.F. Casco, J.V. Misa, M. Defensor, A. Garcia, A. Salvador (submitted for ICMAT)
Observation of multiple phonon-assisted emission in InAs quantum dots embedded in InGaAs/ GaAs quantum well
Valynn Katrine P. Mag-usara, Armando S. Somintac, and Arnel A.
Salvador, (submitted for JAP)
Below-bandgap excited, terahertz emission of optically pumped GaAs/AlGaAs multiple quantum wells
Journal of Photochemistry and Photobiology A: Chemistry, Volume 183, Issue 3, 25 October 2006, Pages 334-337
Elmer Estacio, Alex Quema, Romeric Pobre, Gilbert Diwa, Carlito Ponseca, Shingo Ono, Hidetoshi Murakami, Armando Somintac, Joanes Sy, Valynn Mag-usara, Arnel Salvador, Nobuhiko Sarukura
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2004
Time Response characteristics of an oxide confined GaAs/AlGaAs resonant cavity enhanced photodetector,
E. Estacio, C. Alonzo, A. Samson,A. Garcia, A. Somintac and A. Salvador.
Applied Physics Letters Vol 85 Number 15 October 2004
Raman Spectroscopy of in situ annealed InAs/GaAs quantum dots,
M.J.M. De Luna, A. Somintac, E. Estacio, and A. Salvador.
Journal of Applied Physics Vol 96 pp.1267-1269 July 2004
Observation of blue shifted photoluminescence in stacked InAs/GaAs quantum dots
A. Somintac, E. Estacio, and A. Salvador.
Journal of Crystal Growth Vol 251 Issue 1-4 pp 106-200
Observation of high junction electric fields in modulation-doped GaAs/AlGaAs heterostructures by room temperature photoreflectance spectroscopy
E. Estacio, M. Bailon, A. Somintac, R. Sarmiento, and A. Salvador.
Journal of Applied Physics Vol 91 Issue 6 pp 3717-3720.
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2003
Observation of blue-shifted photoluminescence in stacked InAs / G aAs quantum dots
Somintac A, Estacio E, Salvador A.
Journal of Crystal Growth 251 (1-4): 196-200 April 2003
2002
Observation of high junction electric fields in modulation-doped GaAs/AlGaAs heterostructures by room temperature photoreflectance spectroscopy
E.Estacio, M. Bailon, A. Somintac, R. Sarmiento & A. Salvador
J Appl Phys 91 (6), pp. 3717-3720 (2002)
Observation of Blue Shifted Photoluminescence in stacked InAs/GaAs Quantum Dots
A. Somintac, E.Estacio & A. Salvador.
XII MBE International Conference on Molecular Beam
Epitaxy, September 16-20, 2002 in SanFrancisco, California, USA.
ISI Publications
Deep level traps and the temperature behaviour of the photoluminescence in GaAs/AlGaAs multiple quantum wells grown on off-axis substrates
Journal of Luminescence, Volume 143, November 2013, Pages 517-520
Jessica Afalla, Kaye Ann de las Alas, Maria Herminia Balgos, Michelle Bailon-Somintac, Elmer Estacio, Armando Somintac, Arnel Salvador
DOI: 10.1016/j.jlumin.2013.05.034
Observation of picosecond carrier lifetimes in GaAs/ALGaAs single quantum wells grown at 630 °C
Journal of Luminescence, Volume 143, November 2013, Pages 538-541
Jessica Afalla, Maria Herminia Balgos, Alipio Garcia, Jasher John Ibanes, Arnel Salvador, Armando Somintac
DOI: 10.1016/j.jlumin.2013.05.044
Photocarrier Transport and Carrier Recombination Efficiency in Vertically Aligned Si Nanowire Arrays Synthesized Via Metal-Assisted Chemical Etching
Applied Physics Express, Volume 6, August 2013
Joselito Muldera, Neil Irvin Cabello, Joseph Christopher Ragasa, Arvin Mabilangan, Ma. Herminia Balgos, Rafael Jaculbia, Armando Somintac, Elemer Estacio, and Arnel Salvador
DOI: 10.7567/APEX.6.082101
Application of external tensile and compressive strain on a single layer InAs/GaAs quantum dot via epitaxial lift-off
Physica Status Solidi B, Volume 205, August 2013, Pages 1632-1635
Omambac, K.M. , Porquez, J.G. , Afalla, J., Vasquez, D., Balgos, M.H.M., Jaculbia, R., Somintac, A.S., Salvador, A.A.
DOI: 10.1002/pssb.201248573
Terahertz emission from GaAs-AlGaAs core-shell nanowires on Si (100) substrate: Effects of applied magnetic field and excitation wavelength
Applied Physics Letters, Volume 102, February 2013
John Ibanes, J. Herminia Balgos, M. Jaculbia, R. Salvador, A. Somintac, A. Estacio, E. Que, C.T. Tsuzuki, S. Yamamoto, K. Tani, M.
DOI: 10.1063/1.4791570
Saturation and Polarization Characteristics of 1.56μm Optical Probe Pulses in a LTG-GaAs Photoconductive Antenna Terahertz Detector
Journal of Infrared Milli Terahertz Waves, Volume 34, April 2013
Elmer S. Estacio, Masakazu Hibi, Katsuya Saito, Christopher T. Que, Takashi Furuya, Fumiaki Miyamaru, Seizi Nishizawa, Kohji Yamamoto and Masahiko Tani
DOI: 10.1007/s10762-013-9977-3
Lens Coupler and Magnetic Field Terahertz Emission Enhancement in InSb and InAs under 1.55-mExcitation
Japanese Journal of Applied Physics, Vol 52, February 2013
Hidekazu Nakajima, Christopher T. Que, Elmer S. Estacio, Kohji Yamamoto, and Masahiko Tani
DOI: 10.7567/JJAP.52.032201
Fast-Scan Terahertz Time Domain Spectrometer Based on Laser Repetition Frequency Modulation
Japanese Journal of Applied Physics, Vol 52, January 2013
Takashi Furuya, Elmer S. Estacio, Kazuki Horita, Christopher T. Que, Kohji Yamamoto, Fumiaki Miyamaru, Seizi Nishizawa, and Masahiko Tani
DOI: 10.7567/JJAP.52.022401
2013
Intense terahertz emission from molecular beam epitaxy-grown undoped GaAs on p-GaSb (100) substrates pumped by a femtosecond laser at 800 nm wavelength
Journal of Applied Physics, Volume 112, December 2012
Cyril P. Sadia, Aleena Maria Laganapan, Mae Agatha Tumanguil, Elmer Estacio, Armando Somintac, Arnel
Salvador, Christopher T. Que, Kohji Yamamoto, and Masahiko Tani
DOI: 10.1063/1.4770267
Terahertz emission from Indium Oxide films grown on MgO substrates using sub-bandgap photon energy excitation
Optics Express, Volume 20, February 2012
E. Estacio, C. Que, F. C. Awitan, J. I. Bugante, F. I. de Vera, J. Azares, J. Afalla, J. de Vero, A. Somintac, R. Sarmago, A. Salvador, K. Yamamoto, and M. Tani,
DOI: 10.1364/OE.20.004518.
2012
Low temperature Photoluminescence and Raman phonon modes of Au-catalyzed MBE-grown GaAs-AlGaAs core-shell nanowires grown on a pre-patterned Si (111) substrate
Journal of Crystal Growth, Volume 314, January 2011, Pages 268-273
Michelle F. Bailon-Somintac, Jasher J. Ibañeza, Rafael B. Jaculbia, Regine A. Loberternos, Michael J. Defensor, Arnel A. Salvador and Armando S. Somintac
DOI: 10.1016/j.jcrysgro.2010.10.152
2011
Investigation of the terahertz emission characteristics of MBE-grown GaAs-based nanostructures
Journal of Optical Materials, Volume 32, May 2010, Pages 776-779
Satoru Takatori, Pham Hong Minh, Elmer Estacio, Marilou Cadatal-Raduban, Tomoharu Nakazato, Toshihiko Shimizu, Michelle Bailon-Somintac, Armando Somintac, Michael Defensor, Jacqueline Gabayno, Fritz Christian B. Awitan, Rafael B. Jaculbia, Alipio Garcia, Carlito Ponseca Jr., Arnel Salvador and Nobuhiko Sarukura
DOI: 10.1016/j.optmat.2010.02.014
2010
Strong Enhancement of Terahertz emission from GaAs in InAs/GaAs Quantum Dot Structures
Applied Physics Letters, Volume 94, Issue 23, June 2009, Pages 2104-2106
E.Estacio, M.H.Pham, S.Takatori, M.Cadatal-Raduban, T.Nakazato, T.Shimizu, N.Sarukara, A.Somintac, M.Defensor, F.Awitan, R.Jaculbia, A.Salvador, A.Garcia
DOI: http://dx.doi.org/10.1063/1.3148670
2009
Interband dot-to-well transitions in InAs/InGaAs dots in a well probed via photocurrent and electroluminescence spectroscopy
Applied Physics Letters, Volume 92, May 2008.
M. Defensor, V. Magusara, E. Estacio, C. Mateo, A. Somintac, and A. Salvador
DOI: http://dx.doi.org/10.1063/1.2936082
Observation of multiple phonon-assisted emission in InAs quantum dots embedded in InGaAs/ GaAs quantum well
Valynn Katrine P. Mag-usara, Armando S. Somintac, and Arnel A. Salvador. (submitted for JAP)
Control of the surface morphology of MBE-grown InxAl1-xAs and InxGa1-x As layers on InP via manipulation of In content.
J.V. Misa, M.F. Casco, A. Garcia1, A. Salvador.
(submitted for ICMAT)
Surface structure dependent growth of InAs/InAlAs quantum wires on InP(100) substrate
M.F. Casco, J.V. Misa, M. Defensor, A. Garcia, A. Salvador. (Advanced Materials in press)
Transitions of epitaxially lifted-off bulk GaAs and GaAs/AlGaAs quantum well under thermal-induced compressive and tensile strain
Journal of Applied Physics, Volume 104, November 2008
C. M. N. Mateo, J. J. Ibañez, J. G. Fernando, J. C. Garcia, K. Omambac, R. B. Jaculbia, M. Defensor, and A. A. Salvador.
DOI: 10.1063/1.3006437
Transverse magnetic field polarity effects on the terahertz radiation from GaAs/AlGaAs modulation-doped heterostructures with varying AlGaAs spacer-layer thickness
Journal of Applied Physics, Volume 104, October 2008
Elmer Estacio, Nobuhiko Sarukura, Carlito Ponseca, Jr., Armando Somintac, Michelle Bailon-Somintac, Alipio Garcia, and Arnel Salvador
DOI: 10.1063/1.2987036
Interband dot-to-well transitions in InAs/InGaAs dots in a well probed via photocurrent and electroluminescence spectroscopy
Applied Physics Letters, Volume 92, 2008
M.Defensor, V.Magusara, E.Estacio, C.Mateo, A.Somintac, and A.Salvador
DOI: http://dx.doi.org/+10.1063/1.2936082
Surface Structure Dependent Growth of InAs/InAlAs Quantum Wires on InP(100) Substrate
M. F. Casco, J. V. Misa, M. Defensor, A. Garcia and A. Salvador
Semiconductor Photonics: Nano-Structured Materials and Devices, Volume 31, (2008) pp86-88
2008
Intense terahertz emission from molecular beam epitaxy-grown undoped GaAs on p-GaSb (100) substrates pumped by a femtosecond laser at 800 nm wavelength
Journal of Applied Physics, Volume 112, December 2012
Cyril P. Sadia, Aleena Maria Laganapan, Mae Agatha Tumanguil, Elmer Estacio, Armando Somintac, Arnel
Salvador, Christopher T. Que, Kohji Yamamoto, and Masahiko Tani
DOI: 10.1063/1.4770267
Terahertz emission from Indium Oxide films grown on MgO substrates using sub-bandgap photon energy excitation
Optics Express, Volume 20, February 2012
E. Estacio, C. Que, F. C. Awitan, J. I. Bugante, F. I. de Vera, J. Azares, J. Afalla, J. de Vero, A. Somintac, R. Sarmago, A. Salvador, K. Yamamoto, and M. Tani,
DOI: 10.1364/OE.20.004518.